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This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
- Chapter 1: Characterizing electrically active defects by transient capacitance spectroscopy
- Chapter 2: Luminescence from point defects in wide-bandgap, direct-gap semiconductors
- Chapter 3: Vibrational spectroscopy
- Chapter 4: Magnetic resonance methods
- Chapter 5: The role of muons in semiconductor research
- Chapter 6: Positron annihilation spectroscopy, experimental and theoretical aspects
- Chapter 7: First principles methods for defects: state-of-the-art and emerging approaches
- Chapter 8: Microscopy of defects in semiconductors
- Chapter 9: Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography
- Chapter 10: Ion-beam modification of semiconductors
- Chapter 11: Characterizing defects with ion beam analysis and channeling techniques
| Erscheinungsjahr: | 2019 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Importe, Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Inhalt: | Gebunden |
| ISBN-13: | 9781785616556 |
| ISBN-10: | 1785616552 |
| Sprache: | Englisch |
| Einband: | Gebunden |
| Redaktion: | Tuomisto, Filip |
| Hersteller: | Institution of Engineering & Technology |
| Verantwortliche Person für die EU: | Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de |
| Maße: | 239 x 163 x 33 mm |
| Von/Mit: | Filip Tuomisto |
| Erscheinungsdatum: | 16.12.2019 |
| Gewicht: | 1,089 kg |
- Chapter 1: Characterizing electrically active defects by transient capacitance spectroscopy
- Chapter 2: Luminescence from point defects in wide-bandgap, direct-gap semiconductors
- Chapter 3: Vibrational spectroscopy
- Chapter 4: Magnetic resonance methods
- Chapter 5: The role of muons in semiconductor research
- Chapter 6: Positron annihilation spectroscopy, experimental and theoretical aspects
- Chapter 7: First principles methods for defects: state-of-the-art and emerging approaches
- Chapter 8: Microscopy of defects in semiconductors
- Chapter 9: Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography
- Chapter 10: Ion-beam modification of semiconductors
- Chapter 11: Characterizing defects with ion beam analysis and channeling techniques
| Erscheinungsjahr: | 2019 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Importe, Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Inhalt: | Gebunden |
| ISBN-13: | 9781785616556 |
| ISBN-10: | 1785616552 |
| Sprache: | Englisch |
| Einband: | Gebunden |
| Redaktion: | Tuomisto, Filip |
| Hersteller: | Institution of Engineering & Technology |
| Verantwortliche Person für die EU: | Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de |
| Maße: | 239 x 163 x 33 mm |
| Von/Mit: | Filip Tuomisto |
| Erscheinungsdatum: | 16.12.2019 |
| Gewicht: | 1,089 kg |
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