Paul S Ho: Electromigration in Metals

Cover: 9781107032385 | Electromigration in Metals | Fundamentals to Nano-Interconnects | Buch

Dekorationsartikel gehören nicht zum Leistungsumfang.

Sprache: Englisch

102,50 €

inkl. MwSt.

Versandkostenfrei per Post / DHL

Aktuell nicht verfügbar

Kategorien:

Beschreibung

"Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers"--

Über den Autor

Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others.

Inhaltsverzeichnis

1. Introduction to electromigration; 2. Fundamentals of electromigration; 3. Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects; 4. Stress evolution and damage formation in confined metal lines under electric stressing; 5. Electromigration in Cu interconnect structures; 6. Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects; Analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure; 8. Massive scale statistical studies for electromigration; 9. Assessment of electromigration damage in large on-chip power grids. Index.

Details

Erscheinungsjahr:	2022
Fachbereich:	Atomphysik & Kernphysik
Genre:	Importe , Physik
Rubrik:	Naturwissenschaften & Technik
Medium:	Buch
Inhalt:	Gebunden
ISBN-13:	9781107032385
ISBN-10:	1107032385
Sprache:	Englisch
Einband:	Gebunden
Autor:	Ho, Paul S Hu, Chao-Kun Gall, Martin Sukharev, Valeriy
Hersteller:	Cambridge University Press
Verantwortliche Person für die EU:	Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de
Maße:	251 x 175 x 19 mm
Von/Mit:	Paul S Ho (u. a.)
Erscheinungsdatum:	08.09.2022
Gewicht:	0,953 kg