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Cover: 9783540642138 | Metal Impurities in Silicon-Device Fabrication | Klaus Graff | Buch
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Metal Impurities in Silicon-Device Fabrication
Buch von Klaus Graff
Sprache: Englisch

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Beschreibung
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.
Zusammenfassung

The author, in close cooperation with scientists from MPG Stuttgart (Prof. Queisser and Dr. J. Wehr), has extended and updated the treatment that is most important for semiconductor technology

Inhaltsverzeichnis
1. Introduction.- 2. Common Properties of Transition Metals.- 2.1 General Behavior.- 2.2 Contamination of Silicon Wafers.- 2.3 Impact on Device Performance.- 3. Properties of Transition Metals in Silicon.- 3.1 Solubilities.- 3.2 Diffusivities.- 3.3 Dissolved Impurities.- 3.4 Precipitated Metals.- 4. Properties of the Main Impurities.- 4.1 Iron.- 4.2 Nickel.- 4.3 Copper.- 4.4 Molybdenum.- 4.5 Palladium.- 4.6 Platinum.- 4.7 Gold.- 5. Properties of Rare Impurities.- 5.1 Scandium.- 5.2 Titanium.- 5.3 Vanadium.- 5.4 Chromium.- 5.5 Manganese.- 5.6 Cobalt.- 5.7 Zinc.- 5.8 Zircon.- 5.9 Niobium.- 5.10 Ruthenium.- 5.11 Rhodium.- 5.12 Silver.- 5.13 Cadmium.- 5.14 Hafnium.- 5.15 Tantalum.- 5.16 Tungsten.- 5.17 Rhenium.- 5.18 Osmium.- 5.19 Iridium.- 5.20 Mercury.- 6. Detection Methods.- 6.1 Detection of Total Impurity Content.- 6.2 Detection of Dissolved Impurities.- 6.3 Detection of Precipitates.- 7. Requirements of Modern Technology.- 7.1 Reduction of Contamination.- 8. Gettering of Impurities.- 8.1 Gettering Mechanisms.- 8.2 Control of Gettering Efficiency.- 9. Conclusion and Future Trends.- References.
Details
Erscheinungsjahr: 2000
Fachbereich: Chemische Technik
Genre: Mathematik, Medizin, Naturwissenschaften, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Inhalt: xv
270 S.
ISBN-13: 9783540642138
ISBN-10: 3540642137
Sprache: Englisch
Herstellernummer: 10673156
Einband: Gebunden
Autor: Graff, Klaus
Auflage: 2nd revidierte edition
Hersteller: Springer Berlin
Springer Berlin Heidelberg
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 241 x 160 x 22 mm
Von/Mit: Klaus Graff
Erscheinungsdatum: 18.02.2000
Gewicht: 0,606 kg
Artikel-ID: 102318437
Zusammenfassung

The author, in close cooperation with scientists from MPG Stuttgart (Prof. Queisser and Dr. J. Wehr), has extended and updated the treatment that is most important for semiconductor technology

Inhaltsverzeichnis
1. Introduction.- 2. Common Properties of Transition Metals.- 2.1 General Behavior.- 2.2 Contamination of Silicon Wafers.- 2.3 Impact on Device Performance.- 3. Properties of Transition Metals in Silicon.- 3.1 Solubilities.- 3.2 Diffusivities.- 3.3 Dissolved Impurities.- 3.4 Precipitated Metals.- 4. Properties of the Main Impurities.- 4.1 Iron.- 4.2 Nickel.- 4.3 Copper.- 4.4 Molybdenum.- 4.5 Palladium.- 4.6 Platinum.- 4.7 Gold.- 5. Properties of Rare Impurities.- 5.1 Scandium.- 5.2 Titanium.- 5.3 Vanadium.- 5.4 Chromium.- 5.5 Manganese.- 5.6 Cobalt.- 5.7 Zinc.- 5.8 Zircon.- 5.9 Niobium.- 5.10 Ruthenium.- 5.11 Rhodium.- 5.12 Silver.- 5.13 Cadmium.- 5.14 Hafnium.- 5.15 Tantalum.- 5.16 Tungsten.- 5.17 Rhenium.- 5.18 Osmium.- 5.19 Iridium.- 5.20 Mercury.- 6. Detection Methods.- 6.1 Detection of Total Impurity Content.- 6.2 Detection of Dissolved Impurities.- 6.3 Detection of Precipitates.- 7. Requirements of Modern Technology.- 7.1 Reduction of Contamination.- 8. Gettering of Impurities.- 8.1 Gettering Mechanisms.- 8.2 Control of Gettering Efficiency.- 9. Conclusion and Future Trends.- References.
Details
Erscheinungsjahr: 2000
Fachbereich: Chemische Technik
Genre: Mathematik, Medizin, Naturwissenschaften, Technik
Rubrik: Naturwissenschaften & Technik
Medium: Buch
Inhalt: xv
270 S.
ISBN-13: 9783540642138
ISBN-10: 3540642137
Sprache: Englisch
Herstellernummer: 10673156
Einband: Gebunden
Autor: Graff, Klaus
Auflage: 2nd revidierte edition
Hersteller: Springer Berlin
Springer Berlin Heidelberg
Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, D-69121 Heidelberg, juergen.hartmann@springer.com
Maße: 241 x 160 x 22 mm
Von/Mit: Klaus Graff
Erscheinungsdatum: 18.02.2000
Gewicht: 0,606 kg
Artikel-ID: 102318437
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