Modeling and Characterization of RF and Mi...

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Beschreibung

This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.

Zusammenfassung

Covering RF power FETs, this is the first book to address the modeling requirements specific to high-power RF transistors. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. A technology-independent approach is described, and current market-leading high-power RF technology, LDMOS, as well as III-V power devices are used to illustrate key concepts. Written by semiconductor industry professionals with many years' device modeling experience, this is a must-have resource for professionals and new graduates in the power amplifier design and modeling community.

Inhaltsverzeichnis

1. RF and microwave power transistors; 2. An introduction to the compact modeling of high power FETs; 3. Electrical measurement techniques; 4. Passive components: simulation and modeling; 5. Thermal characterization and modeling; 6. Modeling the active transistor; 7. Function approximation for compact modeling; 8. Model implementation in CAD tools; 9. Model validation; About the authors; Index.

Details

Erscheinungsjahr:	2015
Fachbereich:	Allgemeines
Genre:	Importe , Technik
Rubrik:	Naturwissenschaften & Technik
Medium:	Buch
ISBN-13:	9780521870665
ISBN-10:	0521870666
Sprache:	Englisch
Einband:	Gebunden
Autor:	Aaen, Peter Plá, Jaime A. Wood, John
Hersteller:	Cambridge University Press
Verantwortliche Person für die EU:	Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de
Maße:	250 x 175 x 25 mm
Von/Mit:	Peter Aaen (u. a.)
Erscheinungsdatum:	25.03.2015
Gewicht:	0,834 kg

Artikel-ID: 101982952

Zusammenfassung

Inhaltsverzeichnis

Details

Erscheinungsjahr:	2015
Fachbereich:	Allgemeines
Genre:	Importe , Technik
Rubrik:	Naturwissenschaften & Technik
Medium:	Buch
ISBN-13:	9780521870665
ISBN-10:	0521870666
Sprache:	Englisch
Einband:	Gebunden
Autor:	Aaen, Peter Plá, Jaime A. Wood, John
Hersteller:	Cambridge University Press
Verantwortliche Person für die EU:	Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de
Maße:	250 x 175 x 25 mm
Von/Mit:	Peter Aaen (u. a.)
Erscheinungsdatum:	25.03.2015
Gewicht:	0,834 kg